sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Module
Brand:INFINEON
Particular Year:25+
Package:Module
Delivery Date:New and Original
Stock: 3000pcs
DF80R12W2H3F: 1200V, 160A, EasyPACK™ 2B Chopper IGBT Module
Basic Information:
Model No.: DF80R12W2H3F
Voltage: 1200V
Current: 160A
Type: IGBT Module
Overview: DF80R12W2H3F - 1200V, 160A, EasyPACK™ 2B Chopper IGBT Module with CoolSiC™ Schottky Diode, PressFIT Technology and High Speed IGBT H3.
DF80R12W2H3F Specifications:
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) at varying If: 950 mV @ 30 A
Current - reverse leakage at varying Vr: 100 µA @ 1200 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
DF80R12W2H3F Product Features:
Low switching losses
Low thermal resistance Al2O3 footprint
Integrated NTC temperature sensor
Model
Brand
Package
Quantity
Describe
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PIM60
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IGBT module grooved field-stop three-stage inverter 1050V 429A 1080W base installation
ON
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IGBT module grooved field-stop three-phase inverter 1050 V 429 A 1080 W base installation
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PIM50
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IGBT module grooved field-stop three-stage inverter 1000 V 209 A 497 W base installation 50PIM
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IGBT module grooved field-stop three-stage inverter 1000 V 210 A 503 W base installation 58PIM
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SLLIMM™ small low-loss intelligent molded module IPM, 3-phase inverter, 10 A, 600 V short-circuit rugged IGBT
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A: You can inquire through the website, or by phone and email.
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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