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The LTC4449IDCB is a high frequency gate driver designed to drive two N-channel MOSFETs in a synchronous DC/DC converter. The powerful rail-to-rail drive capability reduces switching losses in MOSFETs with high gate capacitance.

The LTC4449IDCB has a separate power supply for the input logic circuitry to match the signal swing of the controller IC. If the input signal is not driven, the LTC4449 initiates a shutdown mode that turns off both external MOSFETs. The input logic signals are internally level shifted to a bootstrap supply that can operate at voltages up to 42V above ground.

The LTC4449IDCB includes undervoltage blocking circuitry on both the driver and the logic supply that shuts down the external MOSFETs in the event of an undervoltage condition, and the LTC4449IDCB also has a built-in adaptive pass-through protection feature that prevents power loss due to cross conduction of current across the MOSFETs.

The LTC4449IDCB is available in a 2mm x 3mm DFN package.

Technical Specifications

Drive Configuration: Half Bridge  

Channel Type: Synchronous  

Number of drivers: 2  

Gate Type: MOSFET (N-Channel)  

Voltage - Supply: 4V ~ 6.5V  

Logic Voltage - VIL, VIH: 3V, 6.5V  

Current - Peak Output (Pour In, Pull Out): 3.2A, 4.5A  

Input Type: Non-Inverting  

High Side Voltage - Maximum (Bootstrap): 42 V  

Rise/Fall Time (typical): 8ns, 7ns  

Operating Temperature: -40°C ~ 125°C (TJ)  

Mounting Type: Surface Mount 

Applications

Distributed power architectures

High Density Power Modules

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