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The ADRF5162BCPZN high power single-pole, double-throw (SPDT) reflective silicon switch is a reflective switch fabricated using a silicon process.The ADRF5162 operates over the frequency range of 0.4 GHz to 8 GHz with a typical insertion loss of 0.6 dB and a typical isolation of 45 dB.The insertion loss path of the device has an average power of 45.5 dBm and a peak power of The device's insertion loss path has 45.5 dBm average power and 50 dBm peak power radio frequency (RF) input power handling capability.

The ADRF5162BCPZN consumes a low 130μA on the +3.3V positive supply and 500μA on the -3.3V negative supply. The device features complementary metal oxide semiconductor (CMOS)/compatible low-voltage transistor-to-transistor logic (LVTTL) control.The ADRF5162 eliminates the need for additional driver circuitry, making it ideal for use as a replacement for GaN and PIN diode-based switches.

The ADRF5162BCPZN is available in a 24-lead, 4.0mm × 4.0mm, RoHS-compliant leadframe chip-scale package (LFCSP) with an operating temperature range of -40°C to +105°C. The ADRF5162BCPZN is also available in a 24-lead, 4.0mm × 4.0mm, RoHS-compliant leadframe chip-scale package (LFCSP).

Applications for the ADRF5162BCPZN

Military radio, radar and electronic countermeasures

Cellular telephone infrastructure

Test and instrumentation

GaN and PIN diode replacements

ADRF5162BCPZN Specifications

Manufacturer: Analog Devices Inc.

Product Category: RF Switch ICs

Switch Configuration: SPDT

Minimum Frequency: 400 MHz

Maximum Frequency: 8 GHz

Intervention loss: 0.6 dB

Closed Isolation - Typical: 30 dB

Minimum operating temperature: - 40 C

Maximum operating temperature: + 125 C

Mounting Style: SMD/SMT

Package / Case: LFCSP-24

Humidity Sensitivity: Yes

Number of switches: Single

Idle Time-Max: 800 ns

Runtime-Max: 800 ns

Operating frequency: 400 MHz to 8 GHz

Operating supply current: 130 uA, 500 uA

Supply Voltage - Max: 3.45 V

Supply Voltage - Min: - 3.45 V

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