sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:BSZ036NE2LSATMA1
Data Manual:BSZ036NE2LSATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:8-PowerTDFN
Delivery Date:New and Original
Stock: 5000pcs
BSZ036NE2LSATMA1 is N-channel power MOSFET Transistors, extremely low gate and output charge, combined with very low on-state resistance and small package size, make OptiMOS™ 25V the best choice for demanding server, datacom and communication voltage regulator solutions.
Product Attributes Of BSZ036NE2LSATMA1
Part Number: BSZ036NE2LSATMA1
Rds On - Drain-Source Resistance: 4.1 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 16 nC
Minimum Operating Temperature: - 55 C
Features Of BSZ036NE2LSATMA1
Save overall system cost by reducing the number of phases in a multi-phase conversion
Reduce power consumption and improve efficiency under all load conditions
Space savings with small package or packaged system solutions such as CanPAK™, S3O8, etc.
Significantly reduce system EMI, eliminating the need for external buffer networks and making products easier to design into
Integrated Circuit Chip BSZ036NE2LSATMA1 N-Channel MOSFET Transistors 8-PowerTDFN
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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