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IMBG65R030M1HXTMA1 is CoolSiC™ MOSFET 650 VSiC MOSFET in a compact 7-pin SMD package based on silicon carbide trench technology for high power applications.

Product Attributes Of IMBG65R030M1HXTMA1

FET Type: N-Channel

Technology: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss): 650 V

Current - Continuous Drain (Id) @ 25°C: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 18V

Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V

Vgs(th) (Max) @ Id: 5.7V @ 8.8mA

Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V

Vgs (Max): +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V

Power Dissipation (Max): 234W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: PG-TO263-7-12

Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Features Of IMBG65R030M1HXTMA1

Continuous hard commutation topology

Suitable for high temperature and harsh operating environment

Realizes bi-directional topology

Sense pins for optimized switching performance

N-Channel IMBG65R030M1HXTMA1 MOSFET Transistors TO-263-8 Integrated Circuit Chip

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