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N-Channel IPD35N10S3L26ATMA1 100V Automotive Grade MOSFETs Transistors TO-252-3

Specifications

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 35 A

Rds On - Drain-Source Resistance: 20 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

Qg - Gate Charge: 39 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 71 W

Channel Mode: Enhancement

Product Description

IPD35N10S3L26ATMA1 is OptiMOS®-T Power-Transistor, Optimized total gate charge for smaller driver output stage.

Features

N-Channel - Enhanced Mode

100% avalanche tested

175°C operating temperature

Maximum current up to 180A

MSL1 peak return temperature up to 260°C

Low switching power and conduction power losses for high thermal efficiency

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