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The IPT026N12NM6 is a general-purpose 120 V MOSFET in a TO leadless package with on-resistance of 2.6 mOhm.

Compared to OptiMOS™ 3, the technology features up to 58% higher RDS(on), up to 66% higher FOMg, up to 90% higher Qrr, and up to 35% higher FOMoss. the IPT026N12NM6 belongs to Infineon's OptiMOS™ 6 power MOSFET family.

IPT026N12NM6 Features

- N-channel, normal level

- Very low on-resistance RDS(on)

- Excellent gate charge x R product (FOM) DS(on)

- Very low reverse recovery charge (Q )rr

- High avalanche energy level

- 175°C operating temperature

- Optimised for high frequency switching

- Lead-free plating; RoHS compliant

- Halogen-free, compliant to IEC61249-2-21

- Meets MSL Level 1 of J-STD-020

IPT026N12NM6 Product Attributes

Manufacturer: Infineon Technologies  

Series: OptiMOS™ 6  

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 120 V  

Current at 25°C - Continuous Drain (Id): 23A (Ta), 224A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 8V, 10V  

On-resistance (max) at different Id, Vgs: 2.6 mOhm @ 115A, 10V  

Vgs(th) at different Id (max): 3.6V @ 169µA  

Gate Charge (Qg) (Max) at Vgs: 88 nC @ 10 V  

Vgs (max): ±20V  

Input capacitance (Ciss) at varying Vds (max): 6500 pF @ 60 V  

Power Dissipation (Max): 3W (Ta), 283W (Tc)  

Operating Temperature: -55°C ~ 175°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: PG-HSOF-8-1  

Package/Housing: 8-PowerSFN 

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