sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHSON-8
Delivery Date:New and Original
Stock: 1680pcs
The power MOSFET IQD016N08NM5SC has a low RDS(on) of 1.57 mOhm and excellent thermal performance for easy management of power loss. In addition, the power dissipated in the double-sided cooled package is five times higher compared to the overmolded package.
This provides higher system efficiency and power density for a variety of end-use applications.
Features
State-of-the-art 80 V silicon technology
Outstanding FOM
Improved thermal performance
Ultra-low parasitics
Maximised chip/package ratio
Benefits
Minimised conduction losses
Reduced voltage overshoot
Increased maximum current capability
Fast switching
Fewer devices in parallel
Lowest RDS(on) on a 5x6 footprint
Improved thermal performance
Easy thermal management
Optimal switching performance
Industry standard package
Applications
Low voltage drives
Telecom Infrastructure
Power Supplies
Server power supplies
Automotive Battery Management Systems (BMS)
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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