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The IQD009N06NM5CGSC is an OptiMOS™ power MOSFET 60 V normal level with industry-leading RDS(on) in a PQFN 5x6 lower source centre gate DSC package.

The power MOSFET IQD009N06NM5CGSC features a low RDS(on) of 0.9 mOhm along with excellent thermal performance for easy power loss management. The centre gate footprint is optimised for parallelisation. In addition, the power dissipated in the double-sided cooled package is five times higher compared to the overmolded package.

This provides higher system efficiency and power density for a variety of end applications.

Features

State-of-the-art 60 V silicon technology

Outstanding FOM

Improved thermal performance

Ultra-low parasitics

Maximised chip/package ratio

Centre gate footprint

Industry standard package

Benefits

Best switching performance

Minimised conduction losses

Fast switching

Reduced voltage overshoot

Increased maximum current capability

Fewer devices in parallel

Lowest RDS(on) on a 5x6 footprint

Easy thermal management

Specification

FET Type: N-Channel  

Technology: MOSFET (metal oxide)  

Drain-Source Voltage (Vdss): 60 V  

Current at 25°C - Continuous Drain (Id): 42A (Ta), 445A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V  

On Resistance (Max) at Different Id, Vgs: 0.9 mOhm @ 50A, 10V  

Vgs(th) at different Id (max): 3.3V @ 163µA  

Gate Charge (Qg) at Vgs (max): 150 nC @ 10 V  

Vgs (max): ±20V  

Input capacitance (Ciss) at varying Vds (max): 12000 pF @ 30 V  

Power Dissipation (Max): 3W (Ta), 333W (Tc)  

Operating Temperature: -55°C ~ 175°C (TJ) 

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