sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHSON-8
Delivery Date:New and Original
Stock: 1680pcs
The power MOSFET IQDH88N06LM5SC has a low RDS(on) of 0.86 mOhm and excellent heat dissipation for easy power loss management. In addition, the power dissipated in the double-sided cooled package is five times higher compared to the overmolded package.
Product Features (IQDH88N06LM5SC)
State-of-the-art 60 V silicon technology
Outstanding FOM
Improved thermal performance
Ultra-low parasitics
Maximised chip/package ratio
Specifications (IQDH88N06LM5SC)
Manufacturer: Infineon
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PG-WHSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 60 V
Id-Continuous drain current: 447 A
Rds On-drain on-resistance: 860 uOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2.3 V
Qg-gate charge: 76 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-Power dissipation: 333 W
Channel mode: Enhancement
Configuration: Single
Fall time: 16 ns
Forward transconductance - min: 115 S
Product Type: MOSFETs
Rise Time: 8 ns
Transistor Type: 1 N-Channel
Typical Off Delay Time: 53 ns
Typical turn-on delay time: 14 ns
Application Areas (IQDH88N06LM5SC)
Low voltage drives
Battery powered
Power Supplies
Server Power
Computing and Data Storage
Model
Brand
Package
Quantity
Describe
INFINEON
PG-WHSON-8
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).
INFINEON
PG-WHTFN-9
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)
INFINEON
PG-WHSON-8
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
INFINEON
PG-WHTFN-9
1680
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)
INFINEON
PG-WHTFN-9
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
INFINEON
PG-WHTFN-9
1000
OptiMOS™ Power MOSFET 40 V Normal Level in PQFN 5x6 Lower Source Centre Gate DSC Package
INFINEON
PG-WHSON-8
1000
OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).
INFINEON
PG-WHTFN-9
1000
OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)
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