sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHTFN-9
Delivery Date:New and Original
Stock: 1000pcs
The power MOSFET IQD005N04NM6CGSC features a low RDS(on) of 0.47 mOhm and excellent thermal performance for easy power loss management. The centre gate footprint is optimised for parallelisation. In addition, the double-sided cooled package offers five times higher power dissipation compared to the overmolded package.
Features
State-of-the-art 40 V silicon technology
Excellent FOM
Improved thermal performance
Ultra-low parasitics
Maximised chip/package ratio
Centre gate footprint
Industry standard package
Benefits
Best switching performance
Minimised conduction losses
Fast switching
Reduced voltage overshoot
Increased maximum current capability
Fewer devices in parallel
Lowest RDS(on) on a 5x6 footprint
Easy thermal management
Specification
FET Type: N-Channel
Technology: MOSFET (metal oxide)
Drain-source voltage (Vdss): 40 V
Current at 25°C - Continuous Drain (Id): 57A (Ta), 597A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
On-resistance (max) at different Id, Vgs: 0.49 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 2.8V @ 1.449mA
Gate Charge (Qg) (Max) at Vgs: 163 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 12000 pF @ 20 V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Model
Brand
Package
Quantity
Describe
INFINEON
PG-WHSON-8
1000
OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).
INFINEON
PG-WHTFN-9
1000
OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)
INFINEON
PG-TTFN-9
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package
INFINEON
PG-TSON-8
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package
ST
TO-247-4
3000
N Channel 650 V, 39 mOhm typical value, 54 A MDmesh M9 power MOSFET, TO-247-4
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