sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHSON-8
Delivery Date:New and Original
Stock: 1000pcs
The power MOSFET IQDH45N04LM6SC has a low RDS (on) of 0.45 mOhm and excellent heat dissipation for easy power loss management. In addition, the power dissipation in the double-sided cooled package can be five times higher than that in the overmolded package.
Product Features
State-of-the-art 40 V silicon technology
Excellent FOM
Improved thermal performance
Ultra-low parasitics
Maximised chip/package ratio
Product Attributes
Manufacturer: Infineon Technologies
Family: OptiMOS™ 6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 40 V
Current at 25°C - Continuous Drain (Id): 58A (Ta), 611A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
On-resistance (max) at different Id, Vgs: 0.49 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 2.3V @ 1.449mA
Gate Charge (Qg) (Max) at Vgs: 78 nC @ 4.5 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 12000 pF @ 20 V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Application Areas
Low voltage drives
Power Tools
Power Supplies
Server Power Supplies
Computing and Data Storage
Model
Brand
Package
Quantity
Describe
INFINEON
TDSON-8
26800
OptiMOS™ 5 Power MOSFETs Extend Temperature Range for Improved Ruggedness
INFINEON
PQFN-8
5000
150V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
INFINEON
PQFN-8
25000
40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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