sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ST
Particular Year:24+
Package:PowerFLAT-4
Delivery Date:New and Original
Stock: 1000pcs
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product Attributes of the STL165N10F8AG
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerFLAT-4
Transistor polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 100 V
Id-Continuous drain current: 107 A
Rds On-drain on-resistance: 6 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 4.5 V
Qg - gate charge: 72.5 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 136 W
Channel mode: Enhancement
Configuration: Single
Downtime: 20 ns
Product Type: MOSFET
Rise Time: 38 ns
Factory Package Quantity: 3000
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 48 ns
Typical turn-on delay time: 33 ns
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
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