sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ST
Particular Year:24+
Package:PowerFLAT-4
Delivery Date:New and Original
Stock: 1000pcs
The STL160N10F8 is a 100 V N-channel enhancement power MOSFET designed in STripFET F8 technology with an enhanced trench gate structure.
It ensures advanced performance specifications of very low on-resistance while reducing internal capacitance and gate charge for faster, more efficient switching.
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerFLAT-4
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain-source breakdown voltage: 100 V
Id-Continuous drain current: 158 A
Rds On-drain on-resistance: 3.2 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 4 V
Qg-gate charge: 90 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 167 W
Channel mode: Enhancement
Configuration: Single
Downtime: 19 ns
Product Type: MOSFET
Rise Time: 17 ns
Factory Package Quantity: 3000
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 60 ns
Typical turn-on delay time: 22 ns
Applications
Server and telecom power supplies
Industrial battery management systems (BMS)
Power tools
Drones
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
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