sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ST
Particular Year:24+
Package:PowerFLAT-4
Delivery Date:New and Original
Stock: 1000pcs
The STL160N10F8 is a 100 V N-channel enhancement power MOSFET designed in STripFET F8 technology with an enhanced trench gate structure.
It ensures advanced performance specifications of very low on-resistance while reducing internal capacitance and gate charge for faster, more efficient switching.
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerFLAT-4
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain-source breakdown voltage: 100 V
Id-Continuous drain current: 158 A
Rds On-drain on-resistance: 3.2 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 4 V
Qg-gate charge: 90 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 167 W
Channel mode: Enhancement
Configuration: Single
Downtime: 19 ns
Product Type: MOSFET
Rise Time: 17 ns
Factory Package Quantity: 3000
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 60 ns
Typical turn-on delay time: 22 ns
Applications
Server and telecom power supplies
Industrial battery management systems (BMS)
Power tools
Drones
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
INFINEON
PG-TO247-4-11
1000
Through Hole N Channel 1200 V 69A (Tc) 326W (Tc) PG-TO247-4-11
INFINEON
PG-TO247-4-14
1000
Through Hole N Channel 1200 V 17A (Tc) 109W (Tc) PG-TO247-4-14
INFINEON
PG-TO247-4-14
1000
Through Hole N Channel 1200 V 31A (Tc) 169W (Tc) PG-TO247-4-14
INFINEON
PG-TO247-4-11
1000
Through Hole N Channel 1200 V 202A (Tc) 750W (Tc) PG-TO247-4-11
INFINEON
PG-TO247-4-14
1000
Through Hole N Channel 1200 V 22A (Tc) 133W (Tc) PG-TO247-4-14
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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This N-channel power MOSFET features enhanced trench gate structure with STripFET F8 technology.Contact Number:86-755-83294757
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