sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Transistors
Brand:ST
Particular Year:24+
Package:TO-263-7
Delivery Date:New and Original
Stock: 8000pcs
STH315N10F7-6 - 100V, 2.1mOhm Automotive-grade N-channel, STripFET F7 Power MOSFET Transistors in H2PAK-6 package
Part Number: STH315N10F7-6
Package: TO-263-7(H2PAK-6)
Type: MOSFET Transistors
Description: N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
Product Overviews
STH315N10F7-6 - The N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product Features
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Designed for automotive applications and AEC-Q101 qualified
Applications
• Switching applications
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
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