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NVH4L030N120M3S - 1200V, 39mohm Silicon Carbide (SiC) MOSFET Transistors in TO247-4L package

Part Number: NVH4L030N120M3S

Package: TO-247-4

Type: Silicon Carbide (SiC) MOSFET Transistors

Description: N-Channel 1200V 73A (Tc) 313W (Tc) Through Hole TO-247-4L

Product Overviews

NVH4L030N120M3S - EliteSiC  MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Product Features

Typical RDS(on) = 29mΩ at Vgs =18V, Id = 30A

Qualified for Automotive According to AEC−Q101

New M3S technology: 28.5mohm RDS(ON) with low EON and EOFF losses

15V to 18V Gate Drive

Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Automotive On Board Charger

• Automotive DC−DC Converter for EV/HEV

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