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NTH4L030N120M3S - 39mohm, 1200V Silicon Carbide (SiC) MOSFET Transistors in TO-247-4L package

Part Number: NTH4L030N120M3S

Package: TO-247-4

Type: Silicon Carbide (SiC) MOSFET Transistors

Description: N-Channel 1200V 73A (Tc) 313W (Tc) Through Hole TO-247-4L

Product Overviews

NTH4L030N120M3S - The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

Product Features

TO-247-4L Package with Kelvin source configuration

Excellent FOM [ = Rdson * Eoss ]

Ultra Low Gate Charge (QG(tot) = 107 nC)

High Speed Switching with Low Capacitance (Coss = 106 pF)

15V to 18V Gate Drive

New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses

100% Avalanche Tested

Halide Free and RoHS Compliant

Typical Applications

• Solar Inverters

• Electric Vehicle Charging Stations

• UPS (Uninterruptible Power Supplies)

• Energy Storage Systems

• SMPS (Switch Mode Power Supplies)

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