sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RBN25H125S1FPQ-A0
Data Manual:RBN25H125S1FPQ-A0.pdf
Brand:Renesas
Particular Year:23+
Package:TO-247A
Delivery Date:New original
Stock: 1000pcs
The RBN25H125S1FPQ-A0 1250V IGBT device is in a TO-247A pin package with built-in FRD system. The device has a fast recovery diode built into a package with a low collector-emitter saturation voltage. Typical applications include UPS, welding, photovoltaic inverters, power converters.
Product specification
IGBT Type: channel
Voltage-emitter breakdown (Max) : 1250 V
Current - Collector (Ic) (Max) : 50 A
Vce(on) (Max.) for different Vge and Ic: 2.34V@15V, 25A
Power - Max. : 223 W
Switching power: 1.1mJ (on), 800µJ (off)
Input type: Standard
Grid charge: 56 nC
Td (On/off) value at 25°C: 19ns/109ns
Test conditions: 600V, 25A, 10 ohms, 15V
Reverse recovery time (trr) : 102 ns
Operating temperature: 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: TO-247A
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Renesas Technology is one of the worlds top ten semiconductor chip suppliers, and has achieved the worlds highest market share in many fields such as mobile communications, automotive electronics, and PC/AV.Renesas Technology was formally established …
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