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RBN40H125S1FPQ-A0 IGBT 1250V in TO-247A pin package with built-in FRD.

Features

Grooved gate and Wafer Technology (G8H series)

A fast recovery diode is built into a package

Low collector-emitter saturation voltage VCE (SAT) = 1.8V (typical) (IC=40 A, VGE=15 V, TA=25°C)

Quality grade: Standard

High speed switching

Short-circuit withstand time (10µs minutes)

Applications: UPS, welding, PV inverter, power conversion system

Product specification

IGBT Type: channel

Voltage-emitter breakdown (Max) : 1250 V

Current - Collector (Ic) (Max) : 80 A

Vce(on) (Max.) for different Vge and Ic: 2.34V@15V, 40A

Power - Max. : 319 W

Switching power: 2mJ (on), 1.4mJ (off)

Input type: Standard

Grid charge: 85 nC

Td (On/off) value at 25°C: 25ns/124ns

Test conditions: 600V, 40A, 10 ohms, 15V

Reverse recovery time (trr) : 156 ns

Operating temperature: 175°C (TJ)

Installation type: Through hole

Package/housing: TO-247-3

Supplier device package: TO-247A

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