sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RBN40H125S1FPQ-A0
Data Manual:RBN40H125S1FPQ-A0.pdf
Brand:Renesas
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 1000pcs
RBN40H125S1FPQ-A0 IGBT 1250V in TO-247A pin package with built-in FRD.
Features
Grooved gate and Wafer Technology (G8H series)
A fast recovery diode is built into a package
Low collector-emitter saturation voltage VCE (SAT) = 1.8V (typical) (IC=40 A, VGE=15 V, TA=25°C)
Quality grade: Standard
High speed switching
Short-circuit withstand time (10µs minutes)
Applications: UPS, welding, PV inverter, power conversion system
Product specification
IGBT Type: channel
Voltage-emitter breakdown (Max) : 1250 V
Current - Collector (Ic) (Max) : 80 A
Vce(on) (Max.) for different Vge and Ic: 2.34V@15V, 40A
Power - Max. : 319 W
Switching power: 2mJ (on), 1.4mJ (off)
Input type: Standard
Grid charge: 85 nC
Td (On/off) value at 25°C: 25ns/124ns
Test conditions: 600V, 40A, 10 ohms, 15V
Reverse recovery time (trr) : 156 ns
Operating temperature: 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: TO-247A
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
INFINEON
TO-247-4
1000
650V, 120A IGBT with anti-parallel diode in TO-247-4 package
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 62A 188W Surface Mount PG-TO263-3
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 55A 188W Surface Mount PG-TO263-3
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Renesas Technology is one of the worlds top ten semiconductor chip suppliers, and has achieved the worlds highest market share in many fields such as mobile communications, automotive electronics, and PC/AV.Renesas Technology was formally established …
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