sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) Diodes
Brand:Wolfspeed
Particular Year:24+
Package:TO-263-2
Delivery Date:New and original
Stock: 3000pcs
The E6D10065G is A 650 V, 10 A 6th generation discrete silicon carbide Schottky diode in the TO-263-2 package.
The Wolfspeed E6Dx series 650V Silicon Carbide (SiC) Schottky diodes improve the performance of power electronics systems by achieving higher efficiency than silicon-based alternatives. In addition, these products enable higher operating frequencies and power densities.
Specifications
Product: : Silicon carbide Schottky diode
Installation style: SMD/SMT
Package/housing: TO-263-2
Configuration: Single
Technology: SiC
If - Forward current: 32 A
Vrrm - Repeat reverse voltage: 650 V
Vf - Forward voltage: 1.3V
Ifsm - Forward surge current: 78 A
Ir-reverse current: 1 uA
Humidity sensitivity: Yes
Operating temperature range: -55 °C to + 175°C
Pd- Power dissipation: 84 W
Vr - Reverse voltage: 650 V
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-220-2
3000
700V, 10A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-220-2
Microchip
TO-247-2
3000
700V 30A Silicon Carbide (SiC) Schottky Barrier Diodes, TO-247-2
Microchip
TO-220-2
3000
700V 30A Silicon Carbide (SiC) Schottky Barrier Diodes, TO-220-2
Microchip
D3PAK
3000
700V 60A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), D3PAK
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Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
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