sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The E3M0045065K is A 650 V, 45 mΩ, 46 A third generation discrete silicon carbide MOSFET in a TO-247-4 package.
Wolfspeed E series automotive silicon carbide power MOSFET is an N-channel enhanced mode, wet resistant MOSFET that meets automotive standards and has PPAP function. These MOSFETs have low switching losses and a high quality factor. The E Series MOSFETs are optimized for EV automotive battery chargers and high voltage DC/DC converters. These MOSFETs are used in motor control, drivetrain traction inverters, and photovoltaic inverters.
Features
Third generation silicon carbide MOSFET technology
Reduces switching losses and minimizes grid ringing
High system efficiency
Higher power density
The system has higher switching frequency and lower capacitance
High blocking voltage, low on-resistance
Fast body diode with low reverse recovery characteristics
Large creepage distance between drain and source
Automotive standard (AEC-Q101) with PPAP function
Halogen-free, in accordance with RoHS directive
Applications
EV charging
DC-DC converter
SMPS
UPS
Solar photovoltaic inverter
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
CAB6R0A23GM4T
CAB6R0A23GM4T is 2300 V, 6 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB6R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…CAB7R5A23GM4T
CAB7R5A23GM4T is 2300 V, 7.5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB7R5A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce cree…CAB5R0A23GM4T
CAB5R0A23GM4T is 2300 V, 5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB5R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…C3M0280090J
The C3M0280090J is a 900 V silicon carbide power MOSFET with a wide creepage distance and a gap distance (~8mm) between drain and source. The device is optimized for high frequency power electronics applications. Typical applications include: renewabl…C3M0160120D
The C3M0160120D is A 1200 V, 160 mΩ, 17 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with high blocking voltage, low on-resistance, and low capacitance high-speed switching. The MOSFET is available in a small TO-2…C3M0350120J
The C3M0350120J is A 1200 V, 7.2 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with a high blocking voltage, low on-resistance, and low capacitance high-speed switch. The MOSFET is available in a small TO-263-7 pack…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: