HAS310M17BM3 - Silicon Carbide Power Module - Shenzhen Mingjiada Electronics Co., Ltd.

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Commodity Model:HAS310M17BM3

Trade Name:Silicon Carbide Power Modules

Brand:Wolfspeed

Particular Year:24+

Package:Module

Delivery Date:New and Original

Stock: 1000pcs

Quantity:

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Product Parameters

Manufacturer

Wolfspeed

Model

HAS310M17BM3

Package

Module

Describe

1700V 310A Silicon Carbide Half-Bridge Module

Product Description

HAS310M17BM3 is 1700V 310A Silicon Carbide Half-Bridge Module.

Features of HAS310M17BM3

Industry Standard 62 mm Footprint

Housing CTI ≥ 600 (Material Group I)

Compliant with EN45545-2 R22/23 HL3

High Humidity Operation THB-80 (HV-H3TRB)

Low Inductance Design Optimized for SiC

Ultra Low Loss, High-Frequency Operation

Normally-off, Fail-safe Device Operation

Copper Baseplate and Aluminum Nitride Insulator

Benefits of HAS310M17BM3

62 mm Form Factor Enables System Retrofit

Increased System Efficiency, due to Low Switching &Conduction Losses of SiC

Zero Reverse Recovery from Schottky Diodes

Zero Turn-off Tail Current from MOSFET

Applications of HAS310M17BM3

Railway Auxiliary & Traction

Induction Heating

Motor Drives

Renewables

EV Fast Charging

UPS and SMPS

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Package

Quantity

Describe

CAB6R0A23GM4T

Wolfspeed

Module

2000

2300V 6.0 mΩ Silicon Carbide Half-Bridge Module

CAB7R5A23GM4T

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2000

2300V 7.5 mΩ Silicon Carbide Half-Bridge Module

CAB5R0A23GM4T

Wolfspeed

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2300V 5.0 mΩ Silicon Carbide Half-Bridge Module

FAQ

1.Is the inventory and price seen on the platform accurate?

A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
2.Are all our products genuine?

A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
3.Can you provide the qualification certificate of the original factory or agent?

A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
4.Can I make an inquiry through the company's website?

A: You can inquire through the website, or by phone and email.
5.When can I deliver the goods after placing an order? How long will it take to get there?

A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
6.Can the company issue an invoice?

A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.

Wolfspeed

Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…

Welcome Here Shenzhen Mingjiada Electronics Co., Ltd.

Product Classification

Integrated Circuit Chip

IoT/IGBT Module

Filter

Wireless Connection

AI Processor Chip

Discrete Semiconductor

Power Management

Connectors

Sensor

Memory

AI Accelerators

Self-Support

Manufacturer

Latest Information

Acquisition of Electronics

Franchise Cooperation

About Us

Commodity Model:HAS310M17BM3

Product Parameters

Product Description

Associated Products

FAQ

1.Is the inventory and price seen on the platform accurate?

2.Are all our products genuine?

3.Can you provide the qualification certificate of the original factory or agent?

4.Can I make an inquiry through the company's website?

5.When can I deliver the goods after placing an order? How long will it take to get there?

6.Can the company issue an invoice?

Wolfspeed

Related Products

CAB6R0A23GM4T
CAB6R0A23GM4T is 2300 V, 6 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB6R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…

CAB7R5A23GM4T
CAB7R5A23GM4T is 2300 V, 7.5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB7R5A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce cree…

CAB5R0A23GM4T
CAB5R0A23GM4T is 2300 V, 5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB5R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…

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Welcome Here Shenzhen Mingjiada Electronics Co., Ltd.

Product Classification

Integrated Circuit Chip

IoT/IGBT Module

Filter

Wireless Connection

AI Processor Chip

Discrete Semiconductor

Power Management

Connectors

Sensor

Memory

AI Accelerators

Self-Support

Manufacturer

Latest Information

Acquisition of Electronics

Franchise Cooperation

About Us

Commodity Model:HAS310M17BM3

Product Parameters

Product Description

Associated Products

FAQ

1.Is the inventory and price seen on the platform accurate?

2.Are all our products genuine?

3.Can you provide the qualification certificate of the original factory or agent?

4.Can I make an inquiry through the company's website?

5.When can I deliver the goods after placing an order? How long will it take to get there?

6.Can the company issue an invoice?

Wolfspeed

Related Products

CAB6R0A23GM4TCAB6R0A23GM4T is 2300 V, 6 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB6R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…

CAB7R5A23GM4TCAB7R5A23GM4T is 2300 V, 7.5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB7R5A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce cree…

CAB5R0A23GM4TCAB5R0A23GM4T is 2300 V, 5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB5R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…

C3M0280090JThe C3M0280090J is a 900 V silicon carbide power MOSFET with a wide creepage distance and a gap distance (~8mm) between drain and source. The device is optimized for high frequency power electronics applications. Typical applications include: renewabl…

C3M0160120DThe C3M0160120D is A 1200 V, 160 mΩ, 17 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with high blocking voltage, low on-resistance, and low capacitance high-speed switching. The MOSFET is available in a small TO-2…

C3M0350120JThe C3M0350120J is A 1200 V, 7.2 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with a high blocking voltage, low on-resistance, and low capacitance high-speed switch. The MOSFET is available in a small TO-263-7 pack…

CAB6R0A23GM4T
CAB6R0A23GM4T is 2300 V, 6 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB6R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…

CAB7R5A23GM4T
CAB7R5A23GM4T is 2300 V, 7.5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB7R5A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce cree…

CAB5R0A23GM4T
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C3M0280090J
The C3M0280090J is a 900 V silicon carbide power MOSFET with a wide creepage distance and a gap distance (~8mm) between drain and source. The device is optimized for high frequency power electronics applications. Typical applications include: renewabl…

C3M0160120D
The C3M0160120D is A 1200 V, 160 mΩ, 17 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with high blocking voltage, low on-resistance, and low capacitance high-speed switching. The MOSFET is available in a small TO-2…

C3M0350120J
The C3M0350120J is A 1200 V, 7.2 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with a high blocking voltage, low on-resistance, and low capacitance high-speed switch. The MOSFET is available in a small TO-263-7 pack…