sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) Modules
Brand:Wolfspeed
Particular Year:25+
Package:YM
Delivery Date:New and original
Stock: 1500pcs
The ECB2R1M12YM3 is a silicon carbide power module launched by Wolfspeed, belonging to the six-unit module (YM series), and is suitable for the automotive electronics field. The following are its core parameters:
Technology: Silicon Carbide (SiC
Configuration: 6 N channels (three-phase inverter)
FET function: -
Drain-source voltage (Vdss) : 1200V (1.2kV
Current at 25°C - continuous drain (Id) : 700A
On-resistance (maximum value) at different ids and Vgs: 2.8 milliohms @ 550A, 15V
Vgs(th) (maximum value) at different ids: 3.6V @ 167mA
Gate charge (Qg) at different Vgs (maximum value) : 1696nC @ 15V
Input capacitance (Ciss) at different Vds (maximum value) : 51300 PPF @ 800V
Power - Maximum value: 1.852kW
Operating temperature: -40°C to 175°C (TJ)
Installation type: Base installation
Packaging/Housing: Module
Performance advantage
Low on-resistance : Under a 550A load, the on-resistance is only 2.8mΩ, offering higher efficiency.
High power density : Utilizing the third-generation MOSFET technology, it is smaller in size and suitable for compact design.
Reliability : Specifically designed for automotive-grade applications, it features industrial-grade temperature resistance.
Applicable scenarios
The ECB2R1M12YM3 is mainly used in high-power scenarios such as inverter systems of new energy vehicles and industrial frequency converters, capable of achieving efficient energy conversion and low-loss operation.
Model
Brand
Package
Quantity
Describe
Wolfspeed
YM
1000
Silicon carbide (SiC) module, MOSFET-array 1200V (1.2kV) 385A 1.1kW (Tj) base mounting
Wolfspeed
YM
1000
Silicon carbide (SiC) module, MOSFET-array 1200V (1.2kV) 545A 1.485kW (Tj) base mounting
Wolfspeed
Module
1000
Silicon carbide (SiC) module 1200V 350A base installation, 62mm, half bridge
Wolfspeed
Module
1000
Silicon carbide (SiC) module 1200V 530A base installation, 62mm, half bridge
Wolfspeed
Module
1000
1200 V, 11 mΩ, GM, T-type, industrial-grade silicon carbide (SiC) module
Wolfspeed
Module
1000
1200 V, 4 mΩ, GM, half-bridge, industrial-grade silicon carbide (SiC) module
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
ECB4R3M12YM3
The ECB4R3M12YM3 is a 1200V silicon carbide power module launched by Wolfspeed, belonging to the YM series of six-unit modules. This module adopts industry-standard packaging technology and optimizes the layout of power terminals, which can reduce ind…ECB2R8M12YM3
ECB2R8M12YM3 is a silicon carbide power module launched by Wolfspeed. It belongs to the YM series of six-pack three-phase modules, with a rated voltage of 1200V, a rated current of 460A, an on-resistance of 2.8mΩ, and is manufactured using Gen 3 tech…C3M0060065D
C3M0045065K is N-Channel Enhancement Mode C3M Silicon Carbide Power MOSFET Transistors.Features Of C3M0060065D3rd generation SiC MOSFET technologyHigh blocking voltage with low On-resistanceHigh speed switching with low capacitancesFast intrinsic diod…C3M0045065K
C3M0045065K is N-Channel Enhancement Mode C3M Silicon Carbide Power MOSFET Transistors.Features Of C3M0045065KC3MTM Silicon Carbide (SiC) MOSFET technologyOptimized package with separate driver source pin8mm of creepage distance between drain and sour…C3M0021120D
C3M0021120D is N-Channel Enhancement Mode C3M Silicon Carbide Power MOSFET Transistors.Features Of C3M0021120D3rd generation SiC MOSFET technologyHigh blocking voltage with low On-resistanceHigh speed switching with low capacitancesFast intrinsic diod…E4M0060075K1
E4M0060075K1 is Automotive N-Channel Enhancement Mode E-Series Silicon Carbide Power MOSFET Transistors.Features Of E4M0060075K1Optimized package with separate driver source pinHigh blocking voltage with low on-resistanceHigh-speed switching with low …Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: