sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKZA75N65SS5
Data Manual:IKZA75N65SS5.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-4
Delivery Date:New original
Stock: 2000pcs
The IKZA75N65SS5 650V IGBT is designed to meet the needs of switching applications between 10kHz and 40kHz, thereby increasing efficiency, shortening product time-to-market, reducing circuit design complexity and optimizing PCB material costs. The TRENCHSTOP™ 5 vertical IGBT is the ideal choice to meet customers' requirements for superior efficiency and high power density.
Product Specifications:
IGBT type: trench type field cut-off
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 80 A
Current-collector pulse (Icm) : 300 A
Vce(on) for different Vge and Ic (Max.) : 1.7V @ 15V, 75A
Power - Max. : 395 W
Switching power: 240µJ (on), 750µJ (off)
Input type: Standard
Grid charge: 164 nC
Td (On/off) at 25°C: 22ns/145ns
Test conditions: 400V, 75A, 5.6ohm, 15V
Operating temperature: -40°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-4
Supplier device package: PG-TO247-4-3
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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