sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:INFINEON
Particular Year:24+
Package:PG-TO220-3
Delivery Date:New and Original
Stock: 5000pcs
The IKA15N60T is a high-performance insulated gate bipolar transistor (IGBT) belonging to the TRENCHSTOP™ family. It integrates a 600V, 15A IGBT and an inverted parallel fast recovery emitter control diode in a TO-220 Full-Pak package.
Parameters
Collector-emitter voltage: 600V
DC collector current: 15A (TC = 25°C), 10.6A (TC = 100°C)
Pulsed collector current: 45A
Diode forward current: 17.2A (TC = 25°C), 10.8A (TC = 100°C)
Diode pulse current: 45A
Gate-emitter voltage: ±20V
Short-circuit withstand time: 5µs (VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C)
Maximum power consumption: 35.7W (TC = 25°C)
Operating junction temperature: -40°C to +175°C
Storage temperature: -55°C to +150°C
Isolation voltage: 2500Vrms
Features
Very low VCEsat: 1.5V (typical)
Low switching losses
Easy parallel switching: due to positive temperature coefficient of VCEsat
Very soft, fast recovery reverse parallel emitter control diode
Highly robust, temperature stable behaviour
Low electromagnetic interference (EMI)
Low gate charge
Very tight parameter distribution
Applications
Air conditioning
Inverters
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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