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IPW65R080CFD is a high-performance N-channel MOSFET chip manufactured by Infineon, belonging to the CoolMOS™ series. This chip is produced using advanced process technology and is specifically designed for high-frequency switching applications. It features low on-resistance and fast switching characteristics, finding extensive use in scenarios such as switching power supplies, motor drives, and DC-DC converters.

Technical Specifications

Model: IPW65R080CFD

Manufacturer: Infineon

Type: N-channel MOSFET

Package: TO-247-3

Maximum drain-source voltage VDS: 650 V

Maximum gate-source voltage VGS: ±20 V

Maximum continuous drain current ID: 43.3 A

On-resistance RDS(on): 80 mΩ (typical, at VGS=10V)

Total power dissipation: 391 W

Operating temperature range: -55°C to +150°C

Switching frequency: up to 1 MHz

Threshold voltage Vgs(th): 4V@1.8mA

Gate charge Qg: 167 nC @ 10 V

Input capacitance Ciss: 5.03 nF @ 100 V

IPW65R080CFD Product Features

Extremely low on-resistance RDS(on): Helps reduce conduction losses and enhance system efficiency.

Fast switching performance: Supports high-frequency applications while maintaining low switching losses.

High breakdown voltage (650V): makes it highly suitable for high-voltage environments.

Excellent thermal stability and reliability: ensures reliable operation across a wide temperature range.

Integrated reverse-bias diode: simplifies circuit design and enhances functional integration.

RoHS compliant: environmentally friendly and suitable for modern electronics manufacturing requirements.

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