sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKQ120N120CS7XKSA1
Data Manual:IKQ120N120CS7XKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 3000pcs
TO-247-3 Through Hole IKQ120N120CS7XKSA1 IGBT Trench Field Stop Transistors
Product Description
IKQ120N120CS7XKSA1 IGBT features a 1200 V collector-emitter blocking voltage capability.
Specifications
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.65 V
Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 216 A
Pd - Power Dissipation: 1004 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Features
VCE = 1200 V
IC = 120 A
IGBT co-packed with full current, soft and low Qrr diode
Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C
Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
Short circuit ruggedness 8 µs
Wide range of dv/dt controllability
Potential applications
Industrial drives
Industrial power supplies
Solar inverters
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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