sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Modules
Brand:Microchip
Particular Year:24+
Package:Module
Delivery Date:New and original
Stock: 1000pcs
The MSCSM120AM31TBL1NG is a 1200V, 79A baseless SiC MOSFET module. Typical applications include: highly reliable power systems, efficient AC /DC and DC/ AC converters, and motor control.
The main features of the MSCSM120AM31TBL1NG device are as follows:
• High Efficiency converter
• Excellent performance at high frequencies
• Mount directly to the radiator (isolated package)
• Low junction to heat sink resistance
• Weldable terminals for power and signals for easy PCB installation
• Highly integrated power conversion system
• Low profile
• RoHS compliant
Specifications of MSCSM120AM31TBL1NG:
Technology: Silicon Carbide (SiC)
Configuration: 2 N channels (phase Angle)
FET function: -
Drain-source voltage (Vdss) : 1200V (1.2kV)
Current at 25°C - Continuous drain (Id) : 79A
On-resistance (Max.) at different ids and Vgs: 31 milliohm @ 40A, 20V
Vgs(th) (Max.) : 2.8V@3mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 232Nc-@20V
Input capacitance (Ciss) at different Vds (Max.) : 3020PF-@1000V
Power - Max: 310W
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Base installation
Package/shell: Module
Supplier device package: -
Basic product number: MSCSM120
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8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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