sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and original
Stock: 2000pcs
The AIMCQ120R030M1T 1200V Automotive CoolSiC MOSFET in Q-DPAK package is specifically designed for 800V automotive architecture applications with OBC/DC-DC.
Advantages:
Lower packaging parasitic effect
Lower switching loss
Simplified design
Optimized PCB components
Basic parameters:
Product: AIMCQ120R030M1T
FET type: N channel
Technology: SiC (Silicon carbide junction transistor)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 78A (Tc)
Driving voltage (Max Rds On, min Rds On) : 18V, 20V
On-resistance (Max.) at different ids and Vgs: 38 milliohm @ 27A, 20V
Vgs(th) (Max.) : 5.1V@8.6mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 57 NC-@20 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 1738 PF-@800 V
FET function: -
Power dissipation (Max.) : 417W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Supplier device package: PG-HDSOP-22
Applications:
Car charger
DC/DC converter
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
1000
CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
INFINEON
TO-247-4
1000
CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/116 A Q-DPAK package (HDSOP 22-3), 19 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/61 A Q-DPAK package (HDSOP-22-3), 40 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/44 A Q-DPAK package (HDSOP 22-3), 60 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/34 A Q-DPAK package (HDSOP-22-3), 80 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/24 A Q-DPAK package (HDSOP-22-3), 117 mΩ
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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