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The IXSH40N120L2KHV is an industrial grade SiC MOSFET with a voltage tolerance of 1200V, low on-resistance and high speed switching for high power applications. The IXSH40N120L2KHV has a low on-resistance that helps reduce energy loss and improve system efficiency ‌.

Technical parameter

Product: IXSH40N120L2KHV

Package/housing: TO-247-4L

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 1.2kV

Id- Continuous drain current: 41 A

Rds On- drain-source on-resistance: 104 mOhms

Vgs - grid - source voltage: -5 V, + 20 V

Vgs TH-gate source threshold voltage: 4.5V

Qg- Grid charge: 53 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd- Power dissipation: 250 W

Channel mode: Enhancement

Trademark: IXYS

Configuration: Single

Descent time: 8.4ns

Product type: SiC MOSFETS

Rise time: 11.7 ns

Transistor type: 1 N-Channel

Type: SiC MOSFET

Typical shutdown delay: 14.5 ns

Typical connection delay: 3.9ns

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