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IMZ120R060M1H: 1200V, CoolSiC™ Trench Silicon Carbide MOSFET Transistor in TO247-4 Package

Basic Information:

Model: IMZ120R060M1H

Package: TO-247-4

Type: CoolSiC™ Silicon Carbide MOSFET Transistor

Overview:

The IMZ120R060M1H is a 1200V, 60mΩ CoolSiC™ SiC MOSFET in a TO247-4 package based on an advanced trench semiconductor process that is optimised for both performance and reliability. SiC MOSFETs offer a number of advantages over traditional silicon (Si)-based switches such as IGBTs and MOSFETs, such as the lowest gate charge and device capacitance levels in the 1200V class of switches, no reverse-recovery losses in commutator-resistant diodes, low switching losses independent of temperature, and no-threshold turn-on characteristics. As a result, CoolSiC™ MOSFETs are ideally suited for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters.

IMZ120R060M1H Product Attributes:

Series: CoolSiC™

FET Type: N-Channel

Technology: SiCFET (Silicon Carbide)

Drain-Source Voltage (Vdss): 1200 V

Current at 25°C - Continuous Drain (Id): 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 15V, 18V

On Resistance (Max) at Different Id, Vgs: 78 mOhm @ 13A, 18V

Vgs(th) at different Id (max): 5.7V @ 5.6mA

Gate Charge (Qg) at Vgs (max): 31 nC @ 18 V

Vgs (max): +23V, -7V

Input capacitance (Ciss) at different Vds (max): 1060 pF @ 800 V

Power Dissipation (Max): 150W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Through Hole

Supplier Device Package: PG-TO247-4-1

Package/Housing: TO-247-4

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