sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Transistor
Brand:INFINEON
Particular Year:25+
Package:TO-247-4
Delivery Date:New and Original
Stock: 3000pcs
IMZ120R060M1H: 1200V, CoolSiC™ Trench Silicon Carbide MOSFET Transistor in TO247-4 Package
Basic Information:
Model: IMZ120R060M1H
Package: TO-247-4
Type: CoolSiC™ Silicon Carbide MOSFET Transistor
Overview:
The IMZ120R060M1H is a 1200V, 60mΩ CoolSiC™ SiC MOSFET in a TO247-4 package based on an advanced trench semiconductor process that is optimised for both performance and reliability. SiC MOSFETs offer a number of advantages over traditional silicon (Si)-based switches such as IGBTs and MOSFETs, such as the lowest gate charge and device capacitance levels in the 1200V class of switches, no reverse-recovery losses in commutator-resistant diodes, low switching losses independent of temperature, and no-threshold turn-on characteristics. As a result, CoolSiC™ MOSFETs are ideally suited for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters.
IMZ120R060M1H Product Attributes:
Series: CoolSiC™
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
On Resistance (Max) at Different Id, Vgs: 78 mOhm @ 13A, 18V
Vgs(th) at different Id (max): 5.7V @ 5.6mA
Gate Charge (Qg) at Vgs (max): 31 nC @ 18 V
Vgs (max): +23V, -7V
Input capacitance (Ciss) at different Vds (max): 1060 pF @ 800 V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-1
Package/Housing: TO-247-4
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