sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:Littelfuse
Particular Year:25+
Package:TO-247-4
Delivery Date:New and original
Stock: 2000pcs
The LSIC1MO120G0025 device is a 1200 V silicon carbide power MOSFET transistor. The LSIC1MO120G0025 is suitable for applications requiring high voltage and high current, such as power management, motor control, inverters and other industrial and consumer electronic products .
Technical parameter
Package/housing: TO-247-4
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 1.2kV
Id- Continuous drain current: 100 A
Rds On- drain-source on-resistance: 32 mOhms
Vgs - grid - source voltage: -5 V, + 20 V
Vgs TH-gate source threshold voltage: 4 V
Qg- Grid charge: 265 nC
Minimum operating temperature: -55 C
Max. operating temperature: + 175 C
Pd- Power dissipation: 500 W
Channel mode: Enhancement
Trademark: IXYS
Configuration: Single
Descent time: 10 ns
Package: Tube
Product type: SiC MOSFETS
Rise time: 10 ns
Series: LSIC1MO120G0xxx
Typical shutdown delay: 31 ns
Typical connection delay: 17 ns
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Littelfuse is a diversified industrial technology manufacturing company dedicated to powering a sustainable, connected and safer world.With a presence in more than 20 countries and approximately 18,000 global employees, works with customers to design …
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