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The IXSH80N120L2KHV is a 1200 V silicon carbide power MOSFET transistor with an on-resistance (RDS(on) of 30mΩ, which means that in the on-state, the resistance of the device is small, helping to reduce energy loss. The IXSH80N120L2KHV device is suitable for applications requiring high efficiency, fast switching and low loss, such as on-board chargers, DC/DC converters for electric/hybrid vehicles ‌.

Technical parameter

Product: IXSH80N120L2KHV

Package/housing: TO-247-4L

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 1.2kV

Id- Continuous drain current: 79 A

Rds On- drain-source on-resistance: 39 mOhms

Vgs - grid - source voltage: -5 V, + 20 V

Qg- Grid charge: 135 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd-power dissipation: 395 W

Channel mode: Enhancement

Trademark: IXYS

Configuration: Single

Descent time: 14 ns

Product type: SiC MOSFETS

Rise time: 24.4ns

Factory packing quantity: 450

Transistor type: 1 N-Channel

Type: SiC MOSFET

Typical shutdown delay: 28.8 ns

Typical connection delay: 12.8 ns

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