sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and original
Stock: 2000pcs
The AIMCQ120R040M1T device is a 1200V automotive CoolSiC™ MOSFET product designed specifically for 800V automotive architecture applications with OBC/DC-DC.
Infineon CoolSiC™ MOSFEts are based on best-in-class channeled semiconductor processes that are optimized for the lowest losses in applications and the highest reliability in operation.
Basic parameters:
Product: AIMCQ120R040M1T
FET type: N channel
Technology: SiC (Silicon carbide junction transistor)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 61A (Tc)
Driving voltage (Max Rds On, min Rds On) : 18V, 20V
On-resistance (Max.) at different ids and Vgs: 50 milliohm @ 20A, 20V
Vgs(th) (Max.) : 5.1V@6.4mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 43 NC-@20 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 1264 PF-@800 V
FET function: -
Power dissipation (Max.) : 341W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Supplier device package: PG-HDSOP-22
Applications:
Car charger
DC/DC converter
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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