sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and original
Stock: 2000pcs
The AIMCQ120R120M1T is a 1200 V, 24A CoolSiC MOSFET for automotive use. The device is specifically designed for OBC/DC-DC 800V automotive architecture applications.
Parameters of AIMCQ120R120M1T:
FET type: N channel
Technology: SiC (Silicon carbide junction transistor)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 24A (Tc)
Driving voltage (Max Rds On, min Rds On) : 18V, 20V
On-resistance (Max.) at different ids and Vgs: 150 milliohm @ 7A, 20V
Vgs(th) (Max.) for different ids: 5.1V@2.2mA
Gate charge (Qg) at different Vgs (Max.) : 18 NC-@20 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 458 PF-@800 V
FET function: -
Power dissipation (Max.) : 161W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Supplier device package: PG-HDSOP-22
Applications:
Car charger
DC/DC converter
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/116 A Q-DPAK package (HDSOP 22-3), 19 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/78 A Q-DPAK package (HDSOP-22-3), 30 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/61 A Q-DPAK package (HDSOP-22-3), 40 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/44 A Q-DPAK package (HDSOP 22-3), 60 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/34 A Q-DPAK package (HDSOP-22-3), 80 mΩ
INFINEON
PG-HDSOP-22
3000
Automotive CoolSiC™ MOSFET 1200 V/18.6 A Q-DPAK package (HDSOP 22-3), 160 mΩ
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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