sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2500pcs
The NTHL099N60S5 is part of the SuperFET® V MOSFET Easy Drive family that offers excellent switching performance without sacrificing ease of use and EMI issues, and is suitable for both hard and soft switching topologies.
Features
• 650 V @ TJ= 150°C
• Typ. RDS(on)= 79.2 m
• 100% Avalanche Tested
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Specification
Series: SuperFET® V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 600 V
Current at 25°C - Continuous Drain (Id): 33A (Tc)
Drive voltage (max. Rds On, min. Rds On) : 10V
On-resistance (max) at different Id, Vgs: 99 mOhm @ 13.5A, 10V
Vgs(th) at different Id (max): 4V @ 2.8mA
Gate Charge (Qg) (Max) at Vgs: 48 nC @ 10 V
Vgs (max): ±30V
Input capacitance (Ciss) at varying Vds (max): 2500 pF @ 400 V
Power Dissipation (Max): 184W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Applications
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
INFINEON
PG-TO247-4-11
1000
Through Hole N Channel 1200 V 69A (Tc) 326W (Tc) PG-TO247-4-11
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