sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Amplifier
Brand:NXP
Particular Year:24+
Package:30-PLGA
Delivery Date:New and Original
Stock: 2000pcs
A5M36SG239T2 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications thatdemand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells andlow power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5Gsystems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integratedsensor that monitors the temperature. Communications to the module can be accomplished via either I2C or SPI.
Features
2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
Advanced high performance in-package Doherty
Fully matched (50 ohm input/output, DC blocked)
Designed for low complexity digital linearization systems
Reduced memory effects for improved linearized error vector magnitude
Autobias on power up
Temperature sensing
Digital interface (I2C or SPI)
Embedded registers and DACs for setting bias conditions
Tx enable control pin for TDD operation
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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