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IKB30N65ES5ATMA1 - 650V, 62A IGBT Transistors with anti-parallel diode in TO-263 package

Product Description

IKB30N65ES5ATMA1 - Hard-switching 650 V, 30 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Summary of Features

Very low VCEsat of 1.35 V at 25 °C, 20 % lower than TRENCHSTOP™ 5 H5

ICn=four times nominal current (100 °C Tc)

Soft current fall characteristics with no tail current

Symmetrical, low voltage overshoot

Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping

Maximum junction temperature Tvj=175 °C

Qualified according to JEDEC standards

Benefits

VCE(peak) clamping circuits not required

Suitable for use with single turn-on / turn-off gate resistor

No need for gate clamping components

Gate drivers with Miller clamping not required

Reduction in the EMI filtering needed

Excellent for paralleling

Applications

Energy Storage Systems

Photovoltaic

Uninterruptible power supplies (UPS)

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