sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKB30N65EH5ATMA1
Brand:INFINEON
Particular Year:24+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
IKB30N65EH5ATMA1 - 650V, 55A IGBT Transistors with anti-parallel diode in TO-263 package
Product Description
IKB30N65EH5ATMA1 - Hard-switching 650V, 55A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 anti parallel diode, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features
650 V breakthrough voltage Compared to Infineon’s HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200 mV reduction in VCEsat
Co-packed with Infineon’s new Rapid Si-diode technology
Low COES /EOSS
Mild positive temperature coefficient VCEsat
Temperature stability of Vf
Benefits
Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50 V increase in the bus voltage possible without compromising reliability
Higher power density design
Applications
Energy Storage Systems
Microinverter solutions
Photovoltaic
Uninterruptible power supplies (UPS)
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
INFINEON
TO-247-4
1000
650V, 120A IGBT with anti-parallel diode in TO-247-4 package
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 62A 188W Surface Mount PG-TO263-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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