sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MASTERGAN4TR
Brand:ST
Particular Year:23+
Package:31-VQFN
Delivery Date:New and Original
Stock: 1000pcs
The MASTERGAN4TR half-bridge high-voltage driver features a high power density supply with an integrated gate driver and two enhancement mode GaN transistors in a half-bridge configuration. The integrated power shunt has a 150mΩ RDS(ON) and 650V drain-source breakdown voltage. An integrated bootstrap diode quickly powers the high-side of the embedded gate driver. The driver provides UVLO protection in both the lower and upper drive sections. This protection prevents the power switch from operating in inefficient or hazardous conditions, and an interlock feature avoids cross-conduction situations. The input pins have an extended voltage range so that microcontrollers, DSP units or Hall effect sensors can be easily connected.
Product Attributes
Output Configuration: Half Bridge
Application: General purpose
Interface: Logic
Load Type: Capacitive and Resistive
Technology: DMOS
On-resistance (typical): 225 mOhm LS, 225 mOhm HS
Current - Output/Channel: 4A, 6.5A
Current - Peak Output: 7A, 16A
Voltage - Supply: 4.75V ~ 9.5V
Voltage - Load: 600V (Max)
Operating Temperature; -40°C ~ 125°C (TJ)
Features: Bootstrap Circuitry
Fail-Safe: Over Temperature, UVLO
Mounting Type: Surface Mount
Package/Housing: 31-VQFN Exposed Pad
Supplier Device Package: 31-QFN (9x9)
Applications
● Switch-mode power supplies
● High voltage PFC, DC-DC and DC-AC converters
● Chargers and adapters
● Uninterruptible power supply (UPS) systems
● Solar power generation
Model
Brand
Package
Quantity
Describe
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
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