sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STL52N60DM6
Brand:ST
Particular Year:23+
Package:8-PowerVDFN
Delivery Date:New and original
Stock: 2000pcs
The STL52N60DM6 600V, N-channel power MOSFETs are part of the MDmesh™ DM6 fast recovery diode. With very low recovery charge (Qrr), very short recovery time (trr), and low RDS(on), this power MOSFET is suitable for highly demanding, efficient converters and is ideal for bridge topologies and ZVS phase-shift converters.
Product attribute
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 600 V
Current at 25°C - Continuous Drain (Id) : 45A (Tc)
Drive voltage (Max Rds On, min Rds On) : 10V
On-resistance (Max.) at different ids and Vgs: 84 milliohm @ 22.5A, 10V
Vgs(th) (Max.) for different ids: 4.75V@250µA
Gate charge (Qg) at different Vgs (Max.) : 52 NC-@10 V
Vgs (Max.) : ±25V
Input capacitance (Ciss) at different Vds (Max.) : 2468 PF-@100 V
FET function: -
Power dissipation (Max.) : 174W (Tc)
Operating temperature: -55°C ~ 150°C (TJ)
Mounting type: Surface mount type
Supplier device package: PowerFlat™ (8x8) HV
Package/case: 8-PowerVDFN
Model
Brand
Package
Quantity
Describe
INFINEON
D2PAK-7
1000
Fully optimized best-in-class performance Transistors at 120 V
INFINEON
8-PowerTDFN
1000
OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on)
INFINEON
9-PowerTDFN
1000
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on)
ST
8-PowerVDFN
2000
Surface Mount N-channel 600 V 21A (Tc) 150W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface mount N-channel 600 V 19 A 125mW (Ta), 3W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface Mount N-channel 600 V 21A (Tc) 140W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface mount N-channel 650 V 4.3A (Ta), 22.5A (Tc) 2.8W (Ta), 189W (Tc) PowerFlat™ (8x8) HV
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This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.Contact Number:86-755-83294757
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