sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET Transistors
Brand:INFINEON
Particular Year:25+
Package:PG-TDSON-8
Delivery Date:New and Original
Stock: 2000pcs
ISC055N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Features Of ISC055N15NM6
Very low RDS(on)
20% lower FOMg than OptiMOS™ 5
Industry's lowest Qrr in 150 V
Improved diode softness vs OptiMOS™ 5
Tight Vgs(th) spread of +/-500 mV
High avalanche ruggedness
Max Tj of 175°C
Benefits Of ISC055N15NM6
Low conduction and switching losses
Stable operation with improved EMI
Better current sharing when paralleling
Optimized PCB area utilization
Enhanced robustness
Improved system reliability
Applications Of ISC055N15NM6
Energy Storage Systems
Industrial power supplies
Photovoltaic
Server power supply units (PSU)
Telecommunication infrastructure
Model
Brand
Package
Quantity
Describe
ST
TO-247
12000
N-channel 1500 V, 6 Ohm typical, 2.5 A PowerMESH(TM) power MOSFET, TO-247 package
INFINEON
PG-TO220-3
5000
CoolMOS® Power Transistor Through-Hole N-Channel 650 V 16 A (Tc) 34 W (Tc) PG-TO220-3-31
INFINEON
TO-220
3000
60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
INFINEON
PG-TSDSON-8
5000
OptiMOS™3 Power Transistor N-Channel 150 V 21 A (Tc) 57 W (Tc) PG-TSDSON-8
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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