sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:2ED21064S06J
Data Manual:2ED21064S06J.pdf
Brand:INFINEON
Particular Year:23+
Package:DSO-14
Delivery Date:New and Original
Stock: 12900pcs
The 2ED21064S06J is a 650 V high-speed high-side high and low-side power MOSFET and IGBT gate driver with a typical 0.29 A pull current, 0.7 A sink current in a DSO-14 package.
Feature Description
Operating voltage (VS node) up to + 650 V
100 V negative VS transient immunity
Integrated ultra-fast, low-resistance bootstrap diode reduces BOM cost
Floating channel designed for bootstrap operation
Separate high-voltage and low-voltage pins for maximum creepage distance and electrical clearance
Separate logic and power grounds for shorter gate loops
Independent undervoltage lockout (UVLO) for both channels
200 nanosecond propagation delay
HIN, LIN logic inputs
25 V maximum supply voltage
Logic operating voltage up to -11 V on VS pin
Negative voltage tolerance of -5 V on inputs
Floating channel can be used to drive N-channel MOSFETs, SiC MOSFETs or high-side IGBTs
Advantages
Integrated bootstrap diode (BSD) - saves space, reduces BOM cost, smaller PCB, simpler design at lower cost
50% reduction in level shift losses
Excellent ruggedness and noise immunity to negative transient voltages (-100 V) on the VS pin
Application Areas
LED lighting
Battery formation
Electric vehicle fast charging
Motor control and drives
Consumer Electronics
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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