sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:BSC112N06LD
Data Manual:BSC112N06LD.pdf
Brand:INFINEON
Particular Year:23+
Package:8-PowerVDFN
Delivery Date:New and Original
Stock: 1000pcs
BSC112N06LD is 60V OptiMOS™ 2 N-Channel (Dual) Power MOSFET Transistors.
Product Attributes
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 30V
Power - Max 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
Benefits
Dual Super SO8 package for high power density (smallest footprint)
Superior thermal resistance
High operating temperature up to 175°C
High shot-through immunity due to Qgd/Qgs<0.8
Pb-free plating, RoHS compliant
Potential Applications
SMPS
Inductive wireless charging
Load switches
Battery management systems
LV drives
Model
Brand
Package
Quantity
Describe
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PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
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N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
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