sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:BSC155N06ND
Data Manual:BSC155N06ND.pdf
Brand:INFINEON
Particular Year:23+
Package:8-PowerVDFN
Delivery Date:New and Original
Stock: 1000pcs
BSC155N06ND is 60V OptiMOS™ power MOSFET Transistors.
Product Attributes
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V
Power - Max 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
Product Features
Dual Super SO8 package for high power density (smallest footprint)
Superior thermal resistance
High operating temperature up to 175°C
High shot-through immunity due to Qgd/Qgs<0.8
Pb-free plating, RoHS compliant
Potential Applications
SMPS
Inductive wireless charging
Load switches
Battery management systems
LV drives
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
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