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Service Telephone:86-755-83294757
Trade Name:IPT009N06NM5
Data Manual:IPT009N06NM5.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-HSOF-8
Delivery Date:New original
Stock: 1000pcs
The IPT009N06NM5 is a 60V OptiMOS™5 N channel power MOSFET in a Toll package. Infineon's TO pin-less package is optimized for high-current applications such as forklifts, light electric vehicles (LeVs), point of load (POL) and telecommunications. The package is the perfect solution for high-power applications that require maximum efficiency, outstanding EMI performance, and optimal thermal performance and space reduction.
Specifications
Product category: MOSFET
Installation style: SMD/SMT
Package/housing: PG-HSOF-8
Transistor polarity: N-Channel
Vds- drain-source breakdown voltage: 60 V
Id- Continuous drain current: 427 A
Rds On- drain-source on-resistance: 1.2 mOhms
Vgs - grid - source voltage: -20 V, + 20 V
Vgs TH-gate source threshold voltage: 2.8V
Qg- Grid charge 56 nC
Minimum operating temperature: -55 °C
Maximum operating temperature: + 175°C
Pd- Power dissipation: 300 W
Channel mode: Enhancement
Package: Reel
Encapsulation: Cut Tape
Trademark: Infineon Technologies
Descent time: 31 ns
Product type: MOSFET
Rise time: 27 ns
Subcategory: MOSFETs
Typical shutdown delay: 63 ns
Typical connection delay: 20 ns
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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