sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:PSMN0R7-25YLDX
Data Manual:PSMN0R7-25YLDX.pdf
Brand:Nexperia
Particular Year:23+
Package:LFPAK56
Delivery Date:New original
Stock: 1000pcs
The PSMN0R7-25YLDX 25V N-channel enhanced MOSFETs are packaged in an LFPAK56 package and offer the high efficiency, low spike performance typically associated with MOSFETs with integrated Schottky or Schottky-like diodes, but without the high leakage current issues. This device is particularly suitable for high-efficiency applications at high switching frequencies.
specification
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 25 V
Current at 25°C - Continuous drain (Id) : 300A (Tc)
Driving voltage (Max Rds On, min Rds On) : 4.5V, 10V
On-resistance (Max.) at different ids and Vgs: 0.72 milliohm @ 25A, 10V
Vgs(th) (Max.) : 2.2V@1mA for different ids
Gate charge (Qg) at different Vgs (Max) : 110.2n@10V
Vgs (Max.) : ±20V
Input capacitance (Ciss) at different Vds (Max.) : 8320 PF-@12V
FET function: -
Power dissipation (Max.) : 158W (Tc)
Operating temperature: -55°C ~ 150°C (TJ)
Mounting type: Surface mount type
Supplier device package: LFPAK56; Power-SO8
Package/housing: SOT-1023, 4-LFPAK
Basic product number: PSMN0R7
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
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