Welcome Here Shenzhen Mingjiada Electronics Co., Ltd.
sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN FET
Brand:Nexperia
Particular Year:24+
Package:WLCSP-22
Delivery Date:New and original
Stock: 3000pcs
The GANB4R8-040CBAZ Bidirectional GaN FET is a 40V, 4.8mΩ bidirectional gallium nitride (GaN) high electron mobility transistor (HEMT). GANB4R8-040CBA is a normally closed emode FET with excellent performance.
Features:
Enhanced mode - Normally off power switch
Bidirectional device
Super high switching speed capability
Ultra-low on-resistance
Comply with RoHS directive, lead-free, in line with REACH standards
High efficiency and high power density
Wafer-level chip Size Package (WLCSP): 2.1mm x 2.1mm
Applications:
High side load switch
OVP protection in smartphone USB port
Power switching circuit
Backup power system
Model
Brand
Package
Quantity
Describe
Nexperia
CCPAK1212i
3000
Gallium nitride (GaN) FET Surface mount N-channel 650 V 58.5A (Tc) 250W (Tc) CCPAK1212i
Nexperia
CCPAK1212
3000
Gallium nitride (GaN) FET surface mount N-channel 650 V 60A (Tc) 300W (Tc) CCPAK1212
Nexperia
VQFN-7
3000
Gallium nitride (GaN) FET Surface mount N-channel 150 V 100A (Ta) 65W (Ta) VQFN
TI
VQFN-38
3000
650V 170mΩ GaN FET with integrated driver, protection and current sensing
TI
54-VQFN
2000
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
TI
WQFN-16
2000
100V 4.4mΩ half-bridge GaN FET with integrated driver and protection
NXP
OM−780−4S4S
1000
2496-2690MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
NXP
OM- 780- 4S4S
1000
2110-2200MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Ansys Semiconductor (China) Co. Nexperia is a leading global manufacturer specialising in discrete devices, logic devices and MOSFET devices. The company became independent at the beginning of 2017.Nexperia places great emphasis on efficiency and prod…
PSC2065JJ
PSC2065JJ SiC Schottky Diodes for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a TO-263-2 through-hole power plastic package offers temperature independent capacitive turn-off,…
PSC2065LQ
PSC2065LQ SiC Schottky Diodes for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a TO-247-2 through-hole power plastic package offers temperature independent capacitive turn-off,…
GAN039-650NTBZ
The GAN039-650NTBZ is a 650V, 33 mΩ Gallium nitride (GaN) FET in a CCPAK1212i flip package with low inductance, low switching losses, and high reliability.Specifications of GAN039-650NTBZ:FET type: N channelTechnology: GaNFET (Gallium nitride)Drain-s…
GAN039-650NBBHP
The GAN039-650NBBHP is a 650 V, 33 Mω gallium nitride (GaN) FET in a CCPAK1212 package. Using leadless bonding, the device optimizes heat dissipation and electrical performance and provides a common source common gate configuration without the need f…
GANE3R9-150QBAZ
The GANE3R9-150QBAZ Gallium nitride (GaN) FET is a universal 150V, 3.9mΩ gallium nitride (GaN) FET. The GANE3R9-150QBA is a normally closed electronic mode device with excellent performance and very low on-resistance. The Nexperia GANE3R9-150QBA come…
NSF060120D7A0J
The NSF060120D7A0J is a silicon carbide based 1200 V power MOSFET in a standard 7-pin TO-263 plastic package (for surface mount PCB technology) with excellent RDSon temperature stability. The MOSFET is ideal for high-power and high-voltage industrial …Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links:
