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NGW75T65H3DFQ is a robust insulated gate bipolar transistor (IGBT) that adopts third-generation technology. It combines the trench gate of carrier storage and the field cut-off (FS) structure. The rated temperature of NGW75T65H3DFQ is 175°C and it features optimized IGBT turn-off loss. Its functions and technical specifications are as follows:

Function

The rated collector current (IC) is as high as 75A

Low conduction and switching losses

Stable and compact parameters facilitate parallel operation

Fully rated as a fast soft reverse recovery diode

Maximum junction temperature: 175 °C

Compliant with RoHS standards, lead-free electroplating

Main specifications

IGBT type: Grooved field cut-off

Voltage - Emitter breakdown (maximum value) : 650 V

Current - Collector (Ic) (maximum value) : 80 A

Current-collector pulse (Icm) : 300 A

Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 75A

Power - Maximum: 600 W

Switching energy: 2.9mJ (on), 1.1mJ (off)

Input type: Standard

Gate charge: 160 nC

Td (on/off) value at 25°C: 29ns/170ns

Test conditions: 400V, 75A, 10 ohms, 15V

Reverse recovery time (trr) : 165 ns

Operating temperature: -40°C to 175°C (TJ)

Installation type: Through hole

Packaging/Shell: TO-247-3

The NGW75T65H3DFQ IGBT has been optimized and is highly suitable for high-voltage and low-frequency industrial power inverters and servo motor drive applications.

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