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The PSMNR51-25YLHX 25V logic level gate drive N-channel enhanced MOSFETs in the LFPAK56E package are optimized for low RDSON, low IDSS leakage (even when overheating), high efficiency and high current. Rated at 380 A, it is optimized for DC load switching and hot swap applications.

specification

FET type: N channel

Technology: MOSFET (Metal oxide)

Drain-source voltage (Vdss) : 25 V

Current at 25°C - Continuous Drain (Id) : 380A (Ta)

Driving voltage (Max Rds On, min Rds On) : 4.5V, 10V

On-resistance (Max.) at different ids and Vgs: 0.57 milliohm @ 25A, 10V

Vgs(th) (Max.) : 2.2V@2mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 113 N@10 V

Vgs (Max.) : ±20V

Input capacitance (Ciss) at different Vds (Max.) : 6990 PF-@12V

FET function: -

Power dissipation (Max) : 333W (Ta)

Operating temperature: -55°C ~ 175°C (TJ)

Mounting type: Surface mount type

Supplier device package: LFPAK56; Power-SO8

Package/housing: SOT-1023, 4-LFPAK

Basic product number: PSMNR51

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